A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variation

Seema Saseendran, SandeepSandeepSeema SaseendranKongnyuy, Tangla DavidTangla DavidKongnyuyFigeys, BrunoBrunoFigeysMarinins, AleksandrsAleksandrsMarininsJansen, RoelofRoelofJansenRottenberg, XavierXavierRottenbergSabuncuoglu Tezcan, DenizDenizSabuncuoglu TezcanSoussan, PhilippePhilippeSoussan2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/33959A 300mm CMOS-compatible PECVD silicon nitride platform for integrated photonics with low loss and low process induced phase variationProceedings paperhttps://doi.org/10.1364/OFC.2019.M1C.4 https://ieeexplore.ieee.org/document/8696834