Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channel

Chang, Shou-ZenShou-ZenChangYu, Hong-YuHong-YuYuAdelmann, ChristophChristophAdelmannDelabie, AnneliesAnneliesDelabieWang, Xin PengXin PengWangVan Elshocht, SvenSvenVan ElshochtAkheyar, AmalAmalAkheyarNyns, LauraLauraNynsSwerts, JohanJohanSwertsAoulaiche, MarcMarcAoulaicheKerner, ChristophChristophKernerAbsil, PhilippePhilippeAbsilHoffmann, Thomas Y.Thomas Y.HoffmannBiesemans, SergeSergeBiesemans2021-10-172021-10-172008-050741-3106https://imec-publications.be/handle/20.500.12860/13499Electrical properties of low-VT metal-gated n-MOSFETs using La2O3/SiOx as interfacial layer between HfLaO high-k dielectrics and Si channelJournal article