Chen, YangyinYangyinChenGoux, LudovicLudovicGouxSwerts, JohanJohanSwertsToeller, MichaelMichaelToellerAdelmann, ChristophChristophAdelmannKittl, JorgeJorgeKittlJurczak, GosiaGosiaJurczakGroeseneken, GuidoGuidoGroesenekenWouters, DirkDirkWouters2021-10-202021-10-2020120741-3106https://imec-publications.be/handle/20.500.12860/20444Hydrogen-induced resistive switching in TiN/ALD HfO2/PEALD TiN RRAM deviceJournal article