The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETs

Caymax, MattyMattyCaymaxLeys, FrederikFrederikLeysMitard, JeromeJeromeMitardMartens, KoenKoenMartensYang, LijunLijunYangPourtois, GeoffreyGeoffreyPourtoisVandervorst, WilfriedWilfriedVandervorstMeuris, MarcMarcMeurisLoo, RogerRogerLoo2021-10-172021-10-1720090013-4651https://imec-publications.be/handle/20.500.12860/15071The influence of the epitaxial growth process parameters on layer characteristics and device performance in Si-passivated Ge pMOSFETsJournal article