Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate

Wang, DanghuiDanghuiWangSimoen, EddyEddySimoenGovoreanu, BogdanBogdanGovoreanuKubicek, StefanStefanKubicekJussot, JulienJulienJussotChan, BTBTChanDumoulin Stuyck, NardNardDumoulin StuyckRadu, IulianaIulianaRaduMocuta, DanDanMocutaClaeys, CorCorClaeys2021-10-272021-10-272019https://imec-publications.be/handle/20.500.12860/34419Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gateProceedings paper10.5075/epfl-ICLAB-ICNF-269189