Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs

Rosseel, ErikErikRosseelProfijt, HaraldHaraldProfijtHikavyy, AndriyAndriyHikavyyTolle, JohnJohnTolleKubicek, StefanStefanKubicekMannaert, GeertGeertMannaertL'abbe, CarolineCarolineL'abbeWostyn, KurtKurtWostynHoriguchi, NaotoNaotoHoriguchiClarysse, TrudoTrudoClarysseParmentier, BrigitteBrigitteParmentierDhayalan, Sathish KumarSathish KumarDhayalanBender, HugoHugoBenderMaes, JanJanMaesMehta, SandeepSandeepMehtaLoo, RogerRogerLoo2021-10-222021-10-222014-10https://imec-publications.be/handle/20.500.12860/24455Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETsProceedings paper10.1149/06406.0977ecst