A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Thesberg, MischaMischaThesbergSchanovsky, FranzFranzSchanovskyZhao, YingYingZhaoKarner, MarkusMarkusKarnerGonzalez-Medina, Jose MariaJose MariaGonzalez-MedinaStanojevic, ZlatanZlatanStanojevicVaisman Chasin, AdrianAdrianVaisman ChasinRzepa, GerhardGerhardRzepa2024-09-112024-08-042024-09-1120242072-666XWOS:001277365800001https://imec-publications.be/handle/20.500.12860/44266A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature ConvergenceJournal article10.3390/mi15070829WOS:001277365800001SEMICONDUCTORPERCOLATIONTRANSPORTMEDLINE:39064340