The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks

Huyghebaert, CedricCedricHuyghebaertConard, ThierryThierryConardVandervorst, WilfriedWilfriedVandervorst2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/9078The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacksJournal article