High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction

Breuil, LaurentLaurentBreuilNyns, LauraLauraNynsRachidi, SanaSanaRachidiBanerjee, KaustuvKaustuvBanerjeeArreghini, AntonioAntonioArreghiniBastos, JoaoJoaoBastosRamesh, SivaSivaRameshVan den Bosch, GeertGeertVan den BoschRosmeulen, MaartenMaartenRosmeulen2023-01-032022-10-302023-01-0320222330-7978WOS:000869001800037https://imec-publications.be/handle/20.500.12860/40642High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reductionProceedings paper10.1109/IMW52921.2022.9779307978-1-6654-9947-7WOS:000869001800037