Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

Afanas'ev, V.V.V.V.Afanas'evStesmans, AndreAndreStesmansDelabie, AnneliesAnneliesDelabieBellenger, FlorenceFlorenceBellengerHoussa, MichelMichelHoussaMeuris, MarcMarcMeuris2021-10-172021-10-1720080003-6951https://imec-publications.be/handle/20.500.12860/13288Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2Journal article