Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

Han, Jeong HwanJeong HwanHanUngur, ElisavetaElisavetaUngurFranquet, AlexisAlexisFranquetOpsomer, KarlKarlOpsomerConard, ThierryThierryConardMoussa, AlainAlainMoussaDe Gendt, StefanStefanDe GendtVan Elshocht, SvenSvenVan ElshochtAdelmann, ChristophChristophAdelmann2021-10-212021-10-212013-072050-7526https://imec-publications.be/handle/20.500.12860/22458Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristicsJournal articlehttp://pubs.rsc.org/en/content/articlelanding/2013/tc/c3tc31172d#!divAbstractLanding/2013/TC/c3tc31172d#!divAbstract