AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity

Cheng, KaiKaiChengLeys, MaartenMaartenLeysDegroote, StefanStefanDegrooteDerluyn, JoffJoffDerluynSijmus, BramBramSijmusFavia, PaolaPaolaFaviaRichard, OlivierOlivierRichardBender, HugoHugoBenderGermain, MarianneMarianneGermainBorghs, GustaafGustaafBorghs2021-10-172021-10-1720080021-4922https://imec-publications.be/handle/20.500.12860/13505AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformityJournal article