Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 K

Nicolett, A. S.A. S.NicolettMartino, Joao AntonioJoao AntonioMartinoSimoen, EddyEddySimoenClaeys, C.C.Claeys2021-10-142021-10-142000https://imec-publications.be/handle/20.500.12860/4617Back gate voltage influence on the LDD SOI NMOSFET series resistance extraction from 150 to 300 KProceedings paper