Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regime

Depas, MichelMichelDepasDegraeve, RobinRobinDegraeveNigam, TanyaTanyaNigamGroeseneken, GuidoGuidoGroesenekenHeyns, MarcMarcHeyns2021-09-292021-09-291996https://imec-publications.be/handle/20.500.12860/1201Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regimeProceedings paper