Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

Wu, XiangyuXiangyuWuCott, DaireDaireCottLin, ZaoyangZaoyangLinShi, YuanyuanYuanyuanShiGroven, BenjaminBenjaminGrovenMorin, PierrePierreMorinVerreck, DevinDevinVerreckSmets, QuentinQuentinSmetsMedina, HenryHenryMedinaSutar, SurajitSurajitSutarAsselberghs, IngeIngeAsselberghsRadu, IulianaIulianaRaduLin, DennisDennisLin2022-09-272022-07-092022-09-2720212380-9248WOS:000812325400193https://imec-publications.be/handle/20.500.12860/40076Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm LgProceedings paper10.1109/IEDM19574.2021.9720695978-1-6654-2572-8WOS:000812325400193