Westlinder, J.J.WestlinderSchram, TomTomSchramPantisano, LuigiLuigiPantisanoCartier, EduardEduardCartierKerber, AndreasAndreasKerberLujan, GuilhermeGuilhermeLujanOlsson, J.J.OlssonGroeseneken, GuidoGuidoGroeseneken2021-10-152021-10-152003https://imec-publications.be/handle/20.500.12860/8398On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devicesJournal article