Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

Vasilev, AlexanderAlexanderVasilevJech, MarkusMarkusJechGrill, AlexanderAlexanderGrillRzepa, GerhardGerhardRzepaSchleich, ChristianChristianSchleichMakarov, AlexanderAlexanderMakarovPobegen, GregorGregorPobegenGrasser, TiborTiborGrasserWaltl, MichaelMichaelWaltlTyaginov, StanislavStanislavTyaginov2022-01-192021-11-022022-01-1920201930-8841WOS:000659349800006https://imec-publications.be/handle/20.500.12860/37872Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC TransistorsProceedings paper10.1109/IIRW49815.2020.9312864978-1-7281-7058-9WOS:000659349800006INSTABILITYMECHANISMS