Impacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAM

Radhakrishnan, JanakiJanakiRadhakrishnanBelmonte, AttilioAttilioBelmonteDevulder, WouterWouterDevulderRedolfi, AugustoAugustoRedolfiHoussa, MichelMichelHoussaKar, Gouri SankarGouri SankarKarGoux, LudovicLudovicGoux2021-10-272021-10-2720190018-9383https://imec-publications.be/handle/20.500.12860/33847Impacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAMJournal articlehttps://ieeexplore.ieee.org/document/8902010