Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Vincent, BenjaminBenjaminVincentShimura, Y.Y.ShimuraTakeuchi, ShotaroShotaroTakeuchiNishimura, T.T.NishimuraEneman, GeertGeertEnemanFirrincieli, AndreaAndreaFirrincieliDemeulemeester, JelleJelleDemeulemeesterVantomme, AndreAndreVantommeClarysse, TrudoTrudoClarysseNakatsuka, O.O.NakatsukaZaima, S.S.ZaimaDekoster, JohanJohanDekosterCaymax, MattyMattyCaymaxLoo, RogerRogerLoo2021-10-192021-10-1920110167-9317https://imec-publications.be/handle/20.500.12860/20098Characterization of GeSn materials for future Ge pMOSFETs source/drain stressorsJournal article