Tang, HongweiHongweiTangLin, DennisDennisLinSubhechha, SubhaliSubhaliSubhechhaVaisman Chasin, AdrianAdrianVaisman ChasinMatsubayashi, DaisukeDaisukeMatsubayashivan Setten, MichielMichielvan SettenWan, YiqunYiqunWanDekkers, HaroldHaroldDekkersLi, JieJieLiSubramanian, ShruthiShruthiSubramanianChen, ZhuoZhuoChenRassoul, NouredineNouredineRassoulJiang, YuchaoYuchaoJiangVan Houdt, JanJanVan HoudtAfanasiev, ValeriValeriAfanasievKar, Gouri SankarGouri SankarKarBelmonte, AttilioAttilioBelmonte2025-05-222025-05-2220250741-3106WOS:001482876000020https://imec-publications.be/handle/20.500.12860/45698While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ∼ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy distribution of traps inferred from temperature-dependent (T =4 K - 300 K) and multi-frequency (f =1 kHz - 100 kHz) admittance measurements, reveals a much higher trap density in TG devices. By analyzing the impact of each process step and conducting forming gas anneal (FGA) experiments, we reveal the role of hydrogen in the deterioration of the SS in the IGZO-based transistors.Journal article10.1109/LED.2025.3549865WOS:001482876000020CELL