Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices

Porret, ClémentClémentPorretMargetis, JoeJoeMargetisTolle, JohnJohnTolleSammak, AmirAmirSammakScappucci, GiordanoGiordanoScappucciPetersen Barbosa Lima, LucasLucasPetersen Barbosa LimaKohen, DavidDavidKohenKunert, BernardetteBernardetteKunertHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLoo2021-10-262021-10-262018https://imec-publications.be/handle/20.500.12860/31556Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devicesMeeting abstracthttps://www.istdm-icsi-2018.com/openconf/modules/request.php?module=oc_program&action=summary.php&id=39