Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology

Boudier, DimitriDimitriBoudierCretu, BogdanBogdanCretuSimoen, EddyEddySimoenCarin, RegisRegisCarinVeloso, AnabelaAnabelaVelosoCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-242021-10-2420170038-1101https://imec-publications.be/handle/20.500.12860/27907Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodologyJournal articlehttp://www.sciencedirect.com/science/article/pii/S0038110116301757