STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) process

Jang, DoyoungDoyoungJangGarcia Bardon, MarieMarieGarcia BardonYakimets, DmitryDmitryYakimetsMiyaguchi, KenichiKenichiMiyaguchiDe Keersgieter, AnAnDe KeersgieterChiarella, ThomasThomasChiarellaRitzenthaler, RomainRomainRitzenthalerDehan, MorinMorinDehanMercha, AbdelkarimAbdelkarimMercha2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22540STI and eSiGe source/drain stressors induced stress modeling in 28 nm technology with replacement gate (RMG) processProceedings paper