N+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structure

Eneman, GeertGeertEnemanSimoen, EddyEddySimoenDelhougne, RomainRomainDelhougneVerheyen, PeterPeterVerheyenRies, MichaelMichaelRiesLoo, RogerRogerLooCaymax, MattyMattyCaymaxVandervorst, WilfriedWilfriedVandervorstDe Meyer, KristinKristinDe Meyer2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/10429N+/P and P+/N junctions in strained Si on thin Strain Relaxed SiGe buffers: the effect of defect density and layer structureProceedings paper