Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination

Acurio Mendez, ElianaElianaAcurio MendezCrupi, FeliceFeliceCrupiDe Jaeger, BriceBriceDe JaegerRonchi, NicoloNicoloRonchiBakeroot, BenoitBenoitBakerootDecoutere, StefaanStefaanDecoutereTrojman, LionelLionelTrojman2021-10-272021-10-2720190018-9383https://imec-publications.be/handle/20.500.12860/32403Influence of GaN- and Si3N4- passivation layers on the performance of AlGaN/GaN diodes with a gated edge terminationJournal articlehttps://ieeexplore.ieee.org/document/8599127