Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutions

Groeseneken, GuidoGuidoGroesenekenAoulaiche, MarcMarcAoulaicheCho, Moon JuMoon JuChoFranco, JacopoJacopoFrancoKaczer, BenBenKaczerKauerauf, ThomasThomasKaueraufMitard, JeromeJeromeMitardRagnarsson, Lars-AkeLars-AkeRagnarssonRoussel, PhilippePhilippeRousselToledano Luque, MariaMariaToledano Luque2021-10-212021-10-212013https://imec-publications.be/handle/20.500.12860/22431Bias-temperature instability of Si and Si(Ge)-channel sub-1nm EOT p-MOS devices: challenges and solutionsProceedings paper