da Silva, LeandroLeandroda SilvaBruynsteen, CedricCedricBruynsteenDeclercq, JakobJakobDeclercqOstrovskis, ArmandsArmandsOstrovskisPittala, FabioFabioPittalaTorfs, GuyGuyTorfsSingh, NishantNishantSinghYin, XinXinYin2026-10-192026-10-192026979-8-3195-1803-3979-8-3195-1804-01529-2517https://imec-publications.be/handle/20.500.12860/60605We present a linear single-ended distributed driver implemented in 130nm BiCMOS process with fT/fmax of 470/650 GHz, designed for single-ended push-pull thin-film lithium niobate (TFLN) traveling-wave Mach-Zehnder modulators (TW-MZMs). High-linearity and low group-delay variation are achieved by using 10 cascode gain cells with large emitter degeneration resistors (23.5Ω) and no capacitive peaking. The driver delivers an overall gain of 14.5 dB, a bandwidth of 105.7 GHz, and an output swing of 2.25 Vpp. Time domain experiments demonstrate 232 Gbaud PAM-4 (464 Gbps gross aggregate rate) with the use of offline DSP.engProceedings paper10.1109/rfic70222.2026.11602309WOS:001882096700078