O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS flash memory

Rothschild, AudeAudeRothschildBreuil, LaurentLaurentBreuilVan den Bosch, GeertGeertVan den BoschRichard, OlivierOlivierRichardConard, ThierryThierryConardFranquet, AlexisAlexisFranquetCacciato, AntonioAntonioCacciatoDebusschere, IngridIngridDebusschereJurczak, GosiaGosiaJurczakVan Houdt, JanJanVan HoudtKittl, JorgeJorgeKittlGanguly, UdayanUdayanGangulyDate, LucienLucienDateBoelen, PieterPieterBoelenSchreutelkamp, RobRobSchreutelkamp2021-10-182021-10-182009https://imec-publications.be/handle/20.500.12860/16141O2 post deposition anneal of Al2O3 blocking dielectric for higher performance and reliability of TANOS flash memoryProceedings paper