A multi-energy level agnostic approach for defect generation during TDDB stress

Vici, AndreaAndreaViciDegraeve, RobinRobinDegraeveKaczer, BenBenKaczerFranco, JacopoJacopoFrancoVan Beek, SimonSimonVan BeekDe Wolf, IngridIngridDe Wolf2022-08-312022-05-272022-06-242022-08-3120220038-1101WOS:000796002800004https://imec-publications.be/handle/20.500.12860/39898A multi-energy level agnostic approach for defect generation during TDDB stressJournal article10.1016/j.sse.2022.108298WOS:000796002800004ULTRATHIN SILICON DIOXIDESUBSTRATE-HOT-ELECTRONTRAP GENERATIONTHIN GATEE MODELBREAKDOWNRELIABILITY