Channel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETs

Srinivasan, PurushothamanPurushothamanSrinivasanSimoen, EddyEddySimoenClaeys, CorCorClaeys2021-10-162021-10-162005https://imec-publications.be/handle/20.500.12860/11261Channel length and oxide thickness scaling effects on low-frequency (1/f) noise in metal/high-k sub-micron MOSFETsProceedings paper