Solving the Annealing of Mo Interconnects for Next-Gen Integrated Circuits

Erofeev, IvanIvanErofeevHartanto, Antony WinataAntony WinataHartantoSaidov, KhakimjonKhakimjonSaidovAabdin, ZainulZainulAabdinPacco, AntoineAntoinePaccoPhilipsen, HaroldHaroldPhilipsenTjiu, Weng WeeiWeng WeeiTjiuHui, Hui KimHui KimHuiHolsteyns, FrankFrankHolsteynsMirsaidov, UtkurUtkurMirsaidov2024-09-232024-07-042024-09-2320242199-160XWOS:001253872900001https://imec-publications.be/handle/20.500.12860/44116Solving the Annealing of Mo Interconnects for Next-Gen Integrated CircuitsJournal article10.1002/aelm.202400035WOS:001253872900001EVOLUTIONRESISTIVITYMOLYBDENUMTEMPERATURERU