A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductors

Van Meirhaeghe, R. L.R. L.Van MeirhaegheVanalme, G. M.G. M.VanalmeGoubert, L.L.GoubertCardon, F.F.CardonVan Daele, P.P.Van Daele2021-09-302021-09-301997https://imec-publications.be/handle/20.500.12860/2251A ballistic electron emission microscopy (BEEM)-investigation of the effects of reactive ion etching (RIE) and of chemical pretreatment on III-V semiconductorsProceedings paper