Togo, MitsuhiroMitsuhiroTogoLee, Jae WooJae WooLeePantisano, LuigiLuigiPantisanoChiarella, ThomasThomasChiarellaRitzenthaler, RomainRomainRitzenthalerKrom, RaymondRaymondKromHikavyy, AndriyAndriyHikavyyLoo, RogerRogerLooRosseel, ErikErikRosseelBrus, StephanStephanBrusMaes, J.W.J.W.MaesMachkaoutsan, VladimirVladimirMachkaoutsanTolle, J.J.TolleEneman, GeertGeertEnemanDe Keersgieter, AnAnDe KeersgieterBoccardi, GuillaumeGuillaumeBoccardiMannaert, GeertGeertMannaertAltamirano Sanchez, EfrainEfrainAltamirano SanchezLocorotondo, SabrinaSabrinaLocorotondoDemand, MarcMarcDemandHoriguchi, NaotoNaotoHoriguchiThean, AaronAaronThean2021-10-202021-10-202012https://imec-publications.be/handle/20.500.12860/21614Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETsProceedings paper