Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliability

Govoreanu, BogdanBogdanGovoreanuDegraeve, RobinRobinDegraeveVan Houdt, JanJanVan HoudtJurczak, GosiaGosiaJurczak2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/13801Statistical investigation of the floating gate memory cell leakage through high-k interpoly dielectrics and its impact on scalability and reliabilityProceedings paper