First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application

Banerjee, KaustuvKaustuvBanerjeeBreuil, LaurentLaurentBreuilMilenin, AlexeyAlexeyMileninPak, MuratMuratPakStiers, JimmyJimmyStiersMcMitchell, SeanSeanMcMitchellDi Piazza, LucaLucaDi PiazzaVan den Bosch, GeertGeertVan den BoschVan Houdt, JanJanVan Houdt2022-03-172022-03-1720212330-7978WOS:000681328500009https://imec-publications.be/handle/20.500.12860/39483First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory applicationProceedings paper10.1109/IMW51353.2021.9439620978-1-7281-8517-0WOS:000681328500009