Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layer

Vais, AbhitoshAbhitoshVaisAlian, AliRezaAliRezaAlianNyns, LauraLauraNynsFranco, JacopoJacopoFrancoSioncke, SonjaSonjaSionckePutcha, VamsiVamsiPutchaYu, HaoHaoYuMols, YvesYvesMolsRooyackers, RitaRitaRooyackersLin, DennisDennisLinMaes, JanJanMaesXie, QiQiXieGivens, M.M.GivensTang, F.F.TangJiang, X.X.JiangMocuta, AndaAndaMocutaCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe MeyerThean, AaronAaronThean2021-10-232021-10-232016https://imec-publications.be/handle/20.500.12860/27424Record mobility (μeff ~3100 cm²/V-s) and reliability performance (Vov~0.5V for 10yr operation) of In0.53Ga0.47As MOS devices using improved surface preparation and a novel interfacial layerProceedings paperlayer http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=7573410