Billet, MaximilienMaximilienBilletVanackere, TomTomVanackereVandekerckhove, TomTomVandekerckhoveNiels, MargotMargotNielsReis, LuisLuisReisMaes, DennisDennisMaesKiewiet, MaxMaxKiewietAkritidis, KonstantinosKonstantinosAkritidisCuyvers, StijnStijnCuyversPoelman, StijnStijnPoelmanReep, TomTomReepBonito Oliva, ValeriaValeriaBonito OlivaLeo, FrancoisFrancoisLeoRoelkens, GuntherGuntherRoelkensKuyken, BartBartKuyken2026-01-192026-01-192024978-1-5106-7043-30277-786Xhttps://imec-publications.be/handle/20.500.12860/58670Photonic integrated circuits enable the miniaturization of photonic systems by integrating key optical functions on a chip. While CMOS compatible silicon and silicon nitride are very efficient platforms for passive circuits, they lack active key functionalities for the realization of a full system on a chip. A versatile solution is to use micro-transfer printing for heterogeneous integration of active devices on such platforms. Here we present the recent advances of micro-transfer printing on silicon nitride and discuss the remaining challenges.enHeterogenous integrationTransfer printingSilicon nitrideSilicon photonicsIII-VLithium niobateScience & TechnologyTechnologyPhysical SciencesProceedings paper10.1117/12.2691017WOS:001214252400010