Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Uedono, AkiraAkiraUedonoFleischmann, ClaudiaClaudiaFleischmannSoulie, Jean-PhilippeJean-PhilippeSoulieAyyad, MustafaMustafaAyyadScheerder, JeroenJeroenScheerderAdelmann, ChristophChristophAdelmannUzuhashi, JunJunUzuhashiOhkubo, TadakatsuTadakatsuOhkuboMichishio, KojiKojiMichishioOshima, NagayasuNagayasuOshimaIshibashi, ShojiShojiIshibashi2024-09-232024-08-072024-09-2320242637-6113WOS:001280003500001https://imec-publications.be/handle/20.500.12860/44273Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe TomographyJournal article10.1021/acsaelm.4c00877WOS:001280003500001ELECTRICAL-RESISTIVITYELECTROPLATED CUOXIDATIONFILMSELECTROMIGRATIONSYSTEMIMPACTSCALE