Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge FIN structures

Loo, RogerRogerLooArimura, HiroakiHiroakiArimuraCott, DaireDaireCottWitters, LiesbethLiesbethWittersPourtois, GeoffreyGeoffreyPourtoisSchulze, AndreasAndreasSchulzeDouhard, BastienBastienDouhardVanherle, WendyWendyVanherleRichard, OlivierOlivierRichardFavia, PaolaPaolaFaviaEneman, GeertGeertEnemanMitard, JeromeJeromeMitardCollaert, NadineNadineCollaert2021-10-242021-10-242017-07https://imec-publications.be/handle/20.500.12860/28852Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge FIN structuresMeeting abstracthttps://ecs.confex.com/ecs/232/webprogram/Paper102012.html