The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodes

Chiou, T.B.T.B.ChiouChen, A.C.A.C.ChenTseng, S.E.S.E.TsengEurlings, M.M.EurlingsHendrickx, EricEricHendrickxHsu, S.S.Hsu2021-10-152021-10-152004https://imec-publications.be/handle/20.500.12860/8681The magnitude of potential exposure-tool-induced critical dimension and overlay errors in double dipole lithography for the 65-nm and 45-nm technology nodesJournal article