Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETs

Zhou, L.L.ZhouLiu, Q.Q.LiuYang, H.H.YangJi, Z.Z.JiXu, H.H.XuTang, B.B.TangSimoen, EddyEddySimoenJiang, H.H.JiangLuo, Y.Y.LuoWang, X.X.WangMa, X.X.MaLi, Y.Y.LiLuo, J.J.LuoYin, H.H.YinZhao, C.C.ZhaoWang, W.W.Wang2021-10-292021-10-2920201530-4388https://imec-publications.be/handle/20.500.12860/36415Insights into the effect of TiN thickness scaling on DC and AC NBTI characteristics in replacement metal gate pMOSFETsJournal articlehttps://ieeexplore.ieee.org/document/9103041