N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices

Petry, JasmineJasminePetryBoccardi, GuillaumeGuillaumeBoccardiXiong, K.K.XiongMueller, MarkusMarkusMuellerHooker, JacobJacobHookerSinganamalla, RaghunathRaghunathSinganamallaCollaert, NadineNadineCollaertDe Meyer, KristinKristinDe Meyer2021-10-172021-10-172008https://imec-publications.be/handle/20.500.12860/14310N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devicesProceedings paper