Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Pham, AntonAntonPhamSoree, BartBartSoreeMagnus, WimWimMagnusJungemann, ChristophChristophJungemannMeinerzhagen, BerndBerndMeinerzhagenPourtois, GeoffreyGeoffreyPourtois2021-10-202021-10-2020120038-1101https://imec-publications.be/handle/20.500.12860/21296Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientationsJournal article