Si/SiGe superlattice I/O finFETs in a vertically-stacked gate-all-around horizontal nanowire technology

Hellings, GeertGeertHellingsMertens, HansHansMertensSubirats, AlexandreAlexandreSubiratsSimoen, EddyEddySimoenSchram, TomTomSchramRagnarsson, Lars-AkeLars-AkeRagnarssonSimicic, MarkoMarkoSimicicChen, Shih-HungShih-HungChenParvais, BertrandBertrandParvaisBoudier, DimitriDimitriBoudierCretu, BogdanBogdanCretuMachillot, JeromeJeromeMachillotPena, VanessaVanessaPenaSun, S.S.SunYoshida, N.N.YoshidaKim, N.N.KimMocuta, AndaAndaMocutaLinten, DimitriDimitriLintenHoriguchi, NaotoNaotoHoriguchi2021-10-252021-10-252018https://imec-publications.be/handle/20.500.12860/30871Si/SiGe superlattice I/O finFETs in a vertically-stacked gate-all-around horizontal nanowire technologyProceedings paperhttps://ieeexplore.ieee.org/document/8510654