Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel

Hellings, GeertGeertHellingsSubirats, AlexandreAlexandreSubiratsFranco, JacopoJacopoFrancoSchram, TomTomSchramRagnarsson, Lars-AkeLars-AkeRagnarssonWitters, LiesbethLiesbethWittersRoussel, PhilippePhilippeRousselLinten, DimitriDimitriLintenHoriguchi, NaotoNaotoHoriguchiBoschke, RomanRomanBoschke2021-10-242021-10-242017https://imec-publications.be/handle/20.500.12860/28481Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channelProceedings paperhttp://ieeexplore.ieee.org/document/7936375/