AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substrates

Cardinael, PieterPieterCardinaelYadav, SachinSachinYadavHahn, HerwigHerwigHahnZhao, MingMingZhaoBanerjee, SourishSourishBanerjeeKazemi Esfeh, BabakBabakKazemi EsfehMauder, ChristofChristofMauderO'Sullivan, BarryBarryO'SullivanPeralagu, UthayasankaranUthayasankaranPeralaguVohra, AnuragAnuragVohraLanger, RobertRobertLangerCollaert, NadineNadineCollaertParvais, BertrandBertrandParvaisRaskin, Jean-PierreJean-PierreRaskin2025-06-262024-08-222025-06-2620240003-6951WOS:001291955700011https://imec-publications.be/handle/20.500.12860/44354AlN/Si interface engineering to mitigate RF losses in MOCVD-grown GaN-on-Si substratesJournal article10.1063/5.0212145WOS:001291955700011