Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow

Waldron, NiamhNiamhWaldronSioncke, SonjaSonjaSionckeFranco, JacopoJacopoFrancoNyns, LauraLauraNynsVais, AbhitoshAbhitoshVaisZhou, DaisyDaisyZhouLin, DennisDennisLinBoccardi, GuillaumeGuillaumeBoccardiSebaai, FaridFaridSebaaiXie, QiQiXieGivens, M.M.GivensTang, F.F.TangJiang, X.X.JiangChiu, EddieEddieChiuOpdebeeck, AnnAnnOpdebeeckMerckling, ClementClementMercklingMaes, JanJanMaesvan Dorp, DennisDennisvan DorpTeugels, LieveLieveTeugelsSibaja-Hernandez, ArturoArturoSibaja-HernandezDe Meyer, KristinKristinDe MeyerBarla, KathyKathyBarlaCollaert, NadineNadineCollaertThean, AaronAaronThean2021-10-232021-10-232015https://imec-publications.be/handle/20.500.12860/26156Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flowProceedings paper