Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy Techniques

Minj, AlbertAlbertMinjGeens, KarenKarenGeensLiang, HuHuLiangHan, HanHanHanNoel, CelineCelineNoelBakeroot, BenoitBenoitBakerootParedis, KristofKristofParedisZhao, MingMingZhaoHantschel, ThomasThomasHantschelDecoutere, StefaanStefaanDecoutere2024-01-222024-01-2220232331-7019WOS:000960456700005https://imec-publications.be/handle/20.500.12860/43436Correlating Structural and Electrical Characteristics of Threading Dislocations in GaN-on-Si Heterostructures and p-n Diodes by Multiple Microscopy TechniquesJournal article10.1103/PhysRevApplied.19.034081WOS:000960456700005SCANNING KELVIN PROBEFORCE MICROSCOPYPERFORMANCEDEFECTS