Spacer etch process for self-aligned bouble patterning of 32nm half-pitch

Altamirano Sanchez, EfrainEfrainAltamirano SanchezVandeweyer, TomTomVandeweyerDekkers, HaroldHaroldDekkersVangoidsenhoven, DizianaDizianaVangoidsenhovenBoullart, WernerWernerBoullart2021-10-172021-10-172009https://imec-publications.be/handle/20.500.12860/14893Spacer etch process for self-aligned bouble patterning of 32nm half-pitchMeeting abstract