Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching

Singh, VivekVivekSinghSinha, JyotiJyotiSinhaAvasthi, SushobhanSushobhanAvasthi2024-01-242024-01-112024-01-2420232637-6113WOS:001132963700001https://imec-publications.be/handle/20.500.12860/43384Investigation of Vacancies Transport in the Bilayer of the Cu2O1-x/CuO1-y Resistive Switching Device and Effect of Growth Temperature on Memristive SwitchingJournal article10.1021/acsaelm.3c00489WOS:001132963700001THIN-FILMSOXIDEMECHANISMBIPOLARTIO2CUXO